| 摘要 |
The invention relates to a method for producing a semiconductor structure, characterised in that the method comprises a step (201) of depositing a crystalline passivation layer continuously covering the entire surface of a layer based on group III nitrides, said crystalline passivation layer, which is deposited from a precursor containing silicon atoms and a flow of nitrogen atoms, consisting of silicon atoms bound to the surface of the layer based on group III nitrides and arranged in a periodical arrangement such that a diffraction image of said crystalline passivation layer obtained by the grazing-incidence diffraction of electrons in the direction [1 -100] comprises: two non-whole diffraction beams (0, -1/3) and (0, -2/3) between the central beam (0, 0) and the whole beam (0, -1), and two non-whole diffraction beams (0, 1/3) and (0, 2/3) between the central beam (0, 0) and the whole beam (0, 1). |
