PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING

摘要

A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).