METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress variation in characteristics of a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: receiving film thickness distribution data of a first silicon-containing layer of a substrate having a polished first silicon-containing layer on a convex structure; calculating processing data that reduces a difference between a film thickness at a central surface side of the substrate and a film thickness at an outer peripheral surface side, on the basis of the film thickness distribution data; carrying the substrate into a processing chamber; supplying process gas to the substrate; and forming a magnetic field with a predetermined magnetic force on the substrate on the basis of the processing data to activate the process gas and to correct film thickness distribution of the first silicon-containing layer.SELECTED DRAWING: Figure 1