Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured

摘要

A process for manufacturing a phase change memory cell, comprising the steps of: forming a resistive element (22); forming a delimiting structure (48, 49, 55a) having an aperture (56) over the resistive element (22); forming a memory portion (38a) of a phase change material in the aperture, the resistive element (22) and the memory portion (38a) being in direct electrical contact and defining a contact area (58) of sublithographic extension. The step of forming a memory portion (38a) further includes filling the aperture (56) with the phase change material and removing from the delimiting structure (48, 49, 55a) an exceeding portion (38b) of the phase change material exceeding the aperture (56). <IMAGE>