| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask used for a method of manufacturing an LCD, the photomask which forms islands in an a-Si layer including a signal terminal region while suppressing an increase in photolithography process and suppresses an increase in parasitic capacitance as a whole. <P>SOLUTION: The photomask (590-1, 590-2) includes light-shielding portions (520-1, 520-2) in figures corresponding to a part of a drain electrode and a source electrode, and semitransparent portions (510-1, 510-2, 510-3, 510-4) in figures corresponding to other part of the drain electrode and the source electrode, a signal line, a signal terminal metal electrode and a leader line. By using the mask, a thin resist pattern can be formed in regions where the signal line, the signal leader line, the signal terminal, a part of the drain electrode and a part of the source electrode are to be formed, and a relatively thick resist pattern can be formed in a region with a short distance from a position where the drain electrode and the source electrode oppose to each other to over the gate electrode width. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
