| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus of exposure which has small heat damage, low radical concentration, and further short exposure time. <P>SOLUTION: A semiconductor wafer is exposed by 1/N of a required light exposure. This exposure is repeated N times. The exposure time (exposure shutter opening time) of 1/N about 1/N light exposure, or a light source of illumination of 1/N is used and derived. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
