| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for permitting fine connection of a semiconductor element. <P>SOLUTION: The semiconductor device has a structure in which wiring raised from a transistor of a semiconductor chip 1 is guided to an external connection to form a fine terminal 4 covered at the base portion with a nitride protective film 3 and protruded from the semiconductor chip 1, on a via terminal 5 surrounded by a silicon oxide film 6. More particularly, a plurality of fine terminals 4 are electrically connected to the terminals 5 provided on the silicon oxide film 6 of the semiconductor chip 1. The nitrided protective film 3 is formed at the base portion of the fine terminal 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
