| 摘要 |
The semiconductor device with the power down mode includes a power down detecting block for generating a power down mode signal by detecting if the power down mode is activated, a power source control block for producing a power control signal whose ratio of an enable period to a disable period is determined by the power down mode signal, a current saving block whose driving current requirement is reduced in the power down mode, a power switching block for controlling the power supply to the current saving block in response to the power control signal, and a current non-saving block whose driving current requirement in the power down mode is identical to that in a normal operation mode. The semiconductor device can prevent the current consumption due to off-leakage components and static current components generated at internal analog circuits in the power down mode.
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