| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS field effect transistor having a trench isolation region and a method of fabricating the same. SOLUTION: In the transistor, a trench isolation region is disposed in a predetermined portion of a semiconductor substrate to define an active region. A source region and a drain region are spaced apart from each other within the active region with a channel region disposed between the source region and the drain region. A gate electrode crosses over the channel region between the source region and the drain region, and a gate insulating layer is disposed between the gate electrode and the channel region. An edge insulating layer thicker than the gate insulating layer is disposed on a lower portion of the gate electrode around the boundary of the trench isolation region and the active region. COPYRIGHT: (C)2007,JPO&INPIT
|
