发明名称 量子ドット構造体の製造方法
摘要 PROBLEM TO BE SOLVED: To provide new means capable of controlling an arrangement pattern of quantum dots and forming a quantum dot layer without requiring many man-hours.SOLUTION: The manufacturing method of a quantum dot structure comprises the steps of: irradiating a laser beam of a pattern corresponding to an arrangement pattern of quantum dots onto a source film 25b formed with a thin film of a quantum dot material; releasing micro droplets 26 of the quantum dot material from a region irradiated by the laser beam; fixing the micro droplets 26 of the quantum dot material to a substrate 30 arranged oppositely to the source film 25b; and forming a plurality of quantum dots on the substrate 30 in the arrangement pattern.
申请公布号 JP5896334(B2) 申请公布日期 2016.03.30
申请号 JP20110160879 申请日期 2011.07.22
申请人 株式会社ニコン 发明人 荒井 大
分类号 H01L31/0352;B82Y40/00;H01L21/208 主分类号 H01L31/0352
代理机构 代理人
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