发明名称 DRIVE CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To prevent malfunction due to a parasitic current generated in a control part for controlling a high-side power element. <P>SOLUTION: In a drive circuit, a high-side control part 1 of a motor driver 30 is provided with an amplifying part 11, a drive part 12, and a Pch MOS transistor PM6. The Pch MOS transistor PM6 is provided between the amplifying part 11 and the drive part 12. Its source is connected to a high-potential side power supply Vdd, its gate is connected to a node N3 and its drain is connected to a node N1 and a gate of a Pch MOS transistor PM3. When the signal levels of complementary signals Sina and Sinb inputted to the control part 1 change, the Pch MOS transistor PM6 functions as a parasitic-current absorbing means for absorbing a parasitic current generated in the control part 1. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009005523(A) 申请公布日期 2009.01.08
申请号 JP20070165293 申请日期 2007.06.22
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP 发明人 SHIBATAKA DAISHI;NOINE TAIICHI;SUGIURA ATSUHITO;KIYOTA SHINICHI
分类号 H02M1/08;H02M3/155;H03K17/695 主分类号 H02M1/08
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