SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device that comprises a thin-film transistor having good electric characteristics and a high reliability, with a high mass productivity.SOLUTION: Provided is a light-emitting device comprising a reverse stagger type thin-film transistor. In the reverse stagger type thin-film transistor, a gate insulating film is formed on a gate electrode. A microcrystal semiconductor film that functions as a channel formation region is formed on the gate insulating film. A buffer layer is formed on the microcrystal semiconductor film. A pair of a source region and a drain region is formed on the buffer layer. A pair of a source electrode and a drain electrode contacted with the source region and the drain region is formed so as to expose a part of the source region and drain region.SELECTED DRAWING: Figure 2