SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide semiconductor device (1) has a silicon carbide substrate (10), a gate insulating film (15), and a gate electrode (27). Silicon carbide substrate (10) includes a first impurity region (17) having a first conductivity type, a well region (13) being in contact with the first impurity region (17) and having a second conductivity type which is different from the first conductivity type, and a second impurity region (14) separated from the first impurity region (17) by the well region (13) and having the first conductivity type. The gate insulating film (15) is in contact with the first impurity region (17) and the well region (14). The gate electrode (27) is in contact with the gate insulating film (15) and is arranged opposite to the well region (14) with respect to the gate insulating film (15). A specific on-resistance at a voltage which is half a gate driving voltage applied to the gate electrode (27) is smaller than twice the specific on-resistance at the gate driving voltage. Accordingly, a silicon carbide semiconductor device (1) capable of improving the switching characteristic can be provided.