Damascene structure with high moisture-resistant oxide and method for making the same

摘要

A semiconductor device includes a substrate, an inter-metal dielectric (IMD) layer over the substrate, and either a nitrogen-containing tetraethoxysilane (TEOS) oxide layer or an oxygen-rich TEOS oxide layer over the IMD layer. The molecular ratio of oxygen in the oxygen-rich TEOS oxide layer is greater than 70%. The IMD layer comprises an extra-low dielectric constant (ELK) layer.