Semiconductor device and method for manufacturing semiconductor device

摘要

Provided are a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes: a gate electrode formed of polysilicon on a substrate with a gate insulating layer interposed between the gate electrode and the substrate; a source region and a drain region formed on the substrate on either side of the gate electrode; a PMD (poly-metal dielectric) liner nitride layer having a non-stoichiometric structure formed on the gate electrode, the source region, and the drain region; and an interlayer insulating layer formed on the PMD liner nitride layer.