| 摘要 |
PROBLEM TO BE SOLVED: To prevent interfacial delamination between an etching stopper layer and an SiOF film which are used when a wiring trench for buried wiring is formed, in a semiconductor integrated circuit device where the buried wiring is formed in an interlayer dielectric containing the SiOF film by a damascene process. SOLUTION: When Cu wiring 33 is embedded, by the damascene process, in the wiring trench 32 formed by dry-etching the interlayer dielectric containing the SiOF films 26, 29, an oxynitrided silicon film 27 is interposed between a silicon nitride film 28 constituting the etching stopper layer of the dry etching and the SiOF film 26, thereby trapping free F generated in the SiOF film 26 with the oxynitrided silicon film 27. COPYRIGHT: (C)2009,JPO&INPIT
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