| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nano-crystalline thin film excellent in nano-size controllability and terminal stability and having a high silicon particle filling density with superior productivity, and also to provide a forming apparatus therefor. SOLUTION: The method for forming the silicon nano-crystalline structure terminated with oxygen comprises: a first step of forming silicon growth nuclei on a substrate surface; a second step of depositing silicon crystal particles with a particle diameter of≤10 nm by thermal reaction of a gas containing silicon elements; and a third step of terminating the surface of the silicon crystal particle with oxygen, wherein the first step is a high-frequency plasma treatment using hydrogen gas. COPYRIGHT: (C)2009,JPO&INPIT
|
