METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device for forming a film in comparatively higher film forming rate by preventing etching to the underlayer (N+). SOLUTION: The method of manufacturing semiconductor device includes the steps of a first step for carrying a silicon substrate into a processing chamber; a second step for supplying at least a first silane system gas and a first etching gas into the processing chamber while the silicon substrate is heated up to a first temperature; a third step for changing the first temperature to a second temperature; and a fourth step for supplying at least a second silane system gas and a second etching gas into the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT