发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve optical detection accuracy in a photosensor, and to widen a light receiving area of the photosensor.SOLUTION: A photosensor comprises: a light receiving element that converts light into an electric signal; a first transistor that transfers the electric signal; and a second transistor that amplifies the electric signal. The light receiving element is formed by using a silicon semiconductor, and the first transistor is formed by using an oxide semiconductor. In addition, the light receiving element is a lateral junction type photodiode, and an n-layer or a p-layer included in the light receiving element, and the first transistor are formed so as to be overlapped with each other.SELECTED DRAWING: Figure 19
申请公布号 JP2016192577(A) 申请公布日期 2016.11.10
申请号 JP20160151152 申请日期 2016.08.01
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KOZUMA MUNEHIRO;KUROKAWA YOSHIMOTO
分类号 H01L27/146;H04N5/374 主分类号 H01L27/146
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