| 摘要 |
<p>An ultra-high density data storage device (200) uses phase-changing diode memory cells, and having a plurality of emitters (102, 104) for directing beams (105) of directed energy, a layer (202) for forming multiple data storage cells and a layered diode structure (202, 204) for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer (202) capable of changing states in response to the beams (105) from the emitters (102, 104) and a second layer (204) forming one layer in the layered diode structure, the second layer (204) comprising a material containing copper, indium and selenide. A method of forming a diode structure (200) for a phase-change data storage array, having multiple thin film layers (202, 204) adapted to form a plurality of data storage cell diodes, comprising depositing a first diode layer (204) of CuInSe material on a substrate (208, 210); and depositing a second diode layer (202) of phase-change material on the first diode layer (204). <IMAGE></p> |
