| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which is formed using AlGaInP system materials, low in deterioration of an emission luminance, and capable of lowering power consumption and achieving high reliability. <P>SOLUTION: A light emitting diode 10 comprises a light emitting part 4 formed on a GaAs substrate 1, and a medium layer 5 and a current diffusion layer 6 made of AlGaInP, where the light emitting part 4 is composed by forming a lower clad layer 41 made of AlGaInP, a light emitting layer 42 made of AlGaInP, and an upper clad layer 43 on the GaAs substrate 1 in order. The respective layers of light emitting part 4 have a hydrogen concentration of 2×10<SP>17</SP>cm<SP>-3</SP>or less, a carbon concentration of 2×10<SP>16</SP>cm<SP>-3</SP>or less, and an oxygen concentration of 2×10<SP>16</SP>cm<SP>-3</SP>or less, and a part or all regions of the current diffusion layer 6 have a hydrogen concentration of 5×10<SP>17</SP>cm<SP>-3</SP>or less, a carbon concentration of 5×10<SP>17</SP>cm<SP>-3</SP>or less, and an oxygen concentration of 2×10<SP>16</SP>cm<SP>-3</SP>or less. <P>COPYRIGHT: (C)2008,JPO&INPIT |
