摘要 |
The invention relates to a method for controlling the operation of at least one semiconductor component, for example a bipolar transistor having an isolated gate (IGBT), for use in power converters, comprising the following steps: a) determining an actual temperature value of the semiconductor component, b) comparing the actual temperature value obtained in step (a) to a target temperature value, and c) actuating an actuator of a temperature control device of the semiconductor component for adjusting the actual temperature value to the target temperature value based on a result from step (b). |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;KULKA, DIETMAR;REIMANN, OLIVER;SCHREMMER, FRANK;SCHWARZER, JENS KONSTANTIN |
发明人 |
KULKA, DIETMAR;REIMANN, OLIVER;SCHREMMER, FRANK;SCHWARZER, JENS KONSTANTIN |