SUBSTRATE DISPOSITION METHOD

摘要

According to an embodiment of the present invention, a method for treating a substrate includes: a spraying step of spraying a gas including a source material containing silicon onto a substrate received in a reaction chamber; a deposition step of generating plasma including an oxygen radical and depositing the source material on the substrate to form an oxide deposition film; and a surface treating step of spraying a plasma gas including the oxygen radical and plasma surface-treating the deposition film, thereby satisfying required density and step coverage, and remarkably reducing the generation of a cavity.