Semiconductor element used as a bulk acoustic wave resonator or as a filter has an auxiliary layer arranged between a lower electrode and a piezoelectric or pyroelectric layer

摘要

Semiconductor element has an auxiliary layer (H) arranged between a lower electrode (U) and a piezoelectric or pyroelectric layer (S). The auxiliary layer promotes the growth of the piezoelectric or pyroelectric layer and consists of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride. An Independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The piezoelectric or pyroelectric layer is made from AlN. The lower electrode and an upper electrode (O) in the layer succession are made from W, Mo, Pt and/or an Al alloy.