| 摘要 |
A method of forming at least a part of a single crystal component (34) comprising a base material, the method comprises the steps of; directing a flow of base material (24) at a first location (22) on a substrate (26, 34), directing a laser (20) towards the first location (22) to fuse the flow of base material (24) with the substrate (26, 34) thereby forming a deposit (22) on the substrate (26), characterised in that, the method comprises controlling the rate of cooling of the deposit (22) and/or substrate (26, 34) so that the single crystal extends into the deposit (22). |
