发明名称 |
Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same |
摘要 |
A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.
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申请公布号 |
US2005042836(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040930953 |
申请日期 |
2004.09.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-HYUN;MIN YO-SEP;CHO YOUNG-JIN |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/06;H01L27/105;H01L27/108;H01L29/788;H01L29/792;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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