SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a high performance semiconductor device displaying a bright image by arranging a thin film transistor of appropriate structure according to the circuit performance and reducing the occupation area of a retention capacitor.

SOLUTION: Thickness of a gate insulating film is differentiated between a circuit attaching importance to the operating speed and a circuit attaching importance to the gate insulation breakdown voltage, or an LDD region forming position is differentiated between a circuit attaching importance to the hot carrier countermeasure and a circuit attaching importance to the off current countermeasure. Consequently, a high performance semiconductor device is realized. Furthermore, a semiconductor device displaying a bright image is realized by forming a retention capacitor through use of a light shielding film and its oxide thereby minimizing the area of the retention capacitor.

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