发明名称 CMOS-based low ESR capacitor and ESD-protection device and method
摘要 A method for fabricating a low dynamic resistance capacitor is an integrated circuit using conventional CMOS processing steps, where in one implementation the structure provides the additional feature of a Zener diode capable of offering ESD protection.
申请公布号 US2006223261(A1) 申请公布日期 2006.10.05
申请号 US20050097528 申请日期 2005.03.31
申请人 CALIFORNIA MICRO DEVICES CORPORATION 发明人 JORGENSEN JOHN;GEE HARRY
分类号 H01L21/8242;H01L21/331 主分类号 H01L21/8242
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