发明名称 Circuit for reading memory cells
摘要 A read circuit for reading at least one memory cell adapted to storing a logic value, the at least one memory cell including: a storage element made of a phase-change material; and an access element for coupling the storage element to the read circuit in response to a selection of the memory cell, the read circuit including: a sense current supply arrangement for supplying a sense current to the at least one memory cell; and at least one sense amplifier for determining the logic value stored in the memory cell on the basis of a voltage developing thereacross, the at least one sense amplifier comprising a voltage limiting circuit for limiting the voltage across the memory cell for preserving the stored logic value, wherein the voltage limiting circuit includes a current sinker for sinking a clamping current, which is subtracted from the sense current and depends on the stored logic value.
申请公布号 US2006221678(A1) 申请公布日期 2006.10.05
申请号 US20050093879 申请日期 2005.03.30
申请人 BEDESCHI FERDINANDO;RESTA CLAUDIO 发明人 BEDESCHI FERDINANDO;RESTA CLAUDIO
分类号 G11C11/00 主分类号 G11C11/00
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