| 发明名称 |
Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device |
| 摘要 |
A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III nitride layer formed on the graded low-temperature deposited layer.
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| 申请公布号 |
US2006223288(A1) |
申请公布日期 |
2006.10.05 |
| 申请号 |
US20060439579 |
申请日期 |
2006.05.24 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGAWARA HIDETO;HIRATSUKA TSUNENORI |
| 分类号 |
H01L21/20;H01L21/66;H01L21/205;H01L21/36;H01L29/15;H01L29/20;H01L29/205;H01L31/20;H01L33/12;H01L33/32 |
主分类号 |
H01L21/20 |
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