发明名称 Wafer characteristics via reflectometry and wafer processing apparatus and method
摘要 An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.
申请公布号 US2006219678(A1) 申请公布日期 2006.10.05
申请号 US20040547579 申请日期 2004.10.06
申请人 SOPORI BHUSHAN L 发明人 SOPORI BHUSHAN L.
分类号 B23K26/38;C23C14/54;G01B11/06;H01L;H01L21/00 主分类号 B23K26/38
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