| 摘要 |
A TFT(Thin Film Transistor) array substrate, a manufacturing method thereof and a display device are provided to form an etch stopper film without increasing the number of manufacturing processes, thereby preventing deterioration of productivity and manufacturing the TFT having stable characteristics. A gate electrode(2) is formed on a substrate. A gate insulating film(3) is formed to cover the gate electrode. A semiconductor layer(30) is installed on the gate electrode through the gate insulating film. A source electrode(6) has a metal film installed on a source area(41) of the semiconductor layer. A drain electrode(7) has a metal film installed in a drain area(42) of the semiconductor layer. A transparent conducting film(10) is interposed between the source electrode and the source area and between the drain electrode and the drain area. A hollow section formed from the transparent conducting film of the semiconductor layer is formed in a pure taper shape. |
