发明名称 COMPOSITION FOR FORMING GATE INSULATING FILM, ORGANIC THIN FILM TRANSISTOR, ELECTRONIC PAPER, AND DISPLAY DEVICE
摘要 The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).
申请公布号 EP3007214(A4) 申请公布日期 2016.08.10
申请号 EP20140808410 申请日期 2014.05.30
申请人 FUJIFILM CORPORATION 发明人 MATSUSHITA YASUAKI;MATSUMURA TOKIHIKO
分类号 H01L21/312;C07C47/55;C07C69/675;C07C233/25;C07F9/08;C08L33/14;H01L29/786;H01L51/05 主分类号 H01L21/312
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