| 摘要 |
PROBLEM TO BE SOLVED: To prevent the formation of a side wall insulation film on a side face of a peripheral gate electrode from being disabled by making an etchant for removing a silicon oxide film within a memory cell area reach a peripheral circuit area, to prevent no LDD diffusion layer from being residual after implementation of ion implantation for forming a source/drain diffusion layer, and to prevent the provision of the LDD diffusion layer in a peripheral transistor from being disabled as a result.SOLUTION: A semiconductor device 1 comprises: a semiconductor substrate 2 in which a memory cell area MC and a peripheral circuit area PA are defined; a plurality of first distribution lines (bit lines BL and dummy bit lines DBL) disposed within the memory cell area MC and extending in an (x) direction; and a guard line GL which is provided for each of the plurality of first distribution lines and disposed within the memory cell area MC while including a plurality of projections P each having an end E2 that faces one end E1 of the first distribution line in the (x) direction, and extends in a (y) direction.SELECTED DRAWING: Figure 2 |
