NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having good quality.SOLUTION: A nitride semiconductor light emitting element of the present embodiment comprises a sapphire substrate 10 as a base and a GaNSb layer 50 grown on a surface side of the sapphire substrate 10. The GaNSb layer 50 is added with Sb (antimony) at a mol fraction equal to or more than 0.1% and an electron concentration is equal to or larger than 1×10cm.SELECTED DRAWING: Figure 7