发明名称 Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers
摘要 A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.
申请公布号 US2005042877(A1) 申请公布日期 2005.02.24
申请号 US20040825849 申请日期 2004.04.16
申请人 SALFELDER JOSEPH F.;SWART WAYNE;PRABHU GOPALAKRISHNA B.;MIRMIRA SRINIVAS R.;ECONOMIKOS LAERTIS;JAMIN FEN FEN;DELEHANTY DONALD J.;HEENAN DANIEL;DANZA JOSEPH M. 发明人 SALFELDER JOSEPH F.;SWART WAYNE;PRABHU GOPALAKRISHNA B.;MIRMIRA SRINIVAS R.;ECONOMIKOS LAERTIS;JAMIN FEN FEN;DELEHANTY DONALD J.;HEENAN DANIEL;DANZA JOSEPH M.
分类号 H01L21/3105;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/3105
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