发明名称 |
Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers |
摘要 |
A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.
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申请公布号 |
US2005042877(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040825849 |
申请日期 |
2004.04.16 |
申请人 |
SALFELDER JOSEPH F.;SWART WAYNE;PRABHU GOPALAKRISHNA B.;MIRMIRA SRINIVAS R.;ECONOMIKOS LAERTIS;JAMIN FEN FEN;DELEHANTY DONALD J.;HEENAN DANIEL;DANZA JOSEPH M. |
发明人 |
SALFELDER JOSEPH F.;SWART WAYNE;PRABHU GOPALAKRISHNA B.;MIRMIRA SRINIVAS R.;ECONOMIKOS LAERTIS;JAMIN FEN FEN;DELEHANTY DONALD J.;HEENAN DANIEL;DANZA JOSEPH M. |
分类号 |
H01L21/3105;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3105 |
代理机构 |
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