| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which can increase especially the front-surface area present on the rear-surface side of the substrate, thereby can improve more largely than conventional devices the heat radiating property generated from the rear-surface side, and further, and can prevent effectively the faultiness caused by the heat generated when operating its semiconductor chips. <P>SOLUTION: The semiconductor device 10 has a silicon substrate 20 having a first wiring layer 24 including a plurality of wirings, second wiring layers 26, and recessed grooves 22 provided on the side of a second principal surface 20b; has one or two or more semiconductor chips 30 having chip-external terminals 32 connected electrically with the first wiring layer of the silicon substrate; and further, has one or two or more peripheral chips 40 connected electrically with the first wiring layer of the silicon substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
