NON-VOLATILE MEMORY DEVICE INCLUDING LOCAL CONTROL GATE ON A PLURALITY OF ISOLATED WELL REGIONS AND RELATED METHOD AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a byte-variable type non-volatile memory device and a system having a high cell array efficiency.

SOLUTION: A non-volatile integrated circuit memory device includes a semiconductor substrate having first and second electrically isolated wells of the same conductivity type. A first plurality of non-volatile memory cell transistors are mounted on the first well, and a second plurality of non-volatile memory cell transistors are mounted on the second well. A local control gate line is electrically coupled with the first and second pluralities of non-volatile memory cell transistors, and a group selection transistor is electrically coupled between the local control gate line and a global control gate line. More particularly, the group selection transistor is configured to electrically couple and decouple the local control gate line and the global control gate line in response to a group selection gate signal applied to a gate of the group selection transistor.

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