| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase change memory allowing for a multi-bit data memory that can repeatedly perform programming with high reliability. SOLUTION: The phase change memory cell 200a has a first electrode, a second electrode, a phase change material 204 provided between the first electrode and the second electrode. The phase change material 204 has step-like programming characteristics. The first electrode, the second electrode, and the phase change material 204 form a via or a trench memory cell. COPYRIGHT: (C)2008,JPO&INPIT |
