发明名称 |
JUNCTION DIODE WITH REDUCED REVERSE CURRENT |
摘要 |
A method for annealing a diode formed of a silicon-germanium alloy that minimizes leakage current is disclosed. The method includes the steps of forming semiconductor pillars of an alloy of silicon and germanium; heating the pillars at a first temperature for at least 30 minutes, and then heating the pillars at a second temperature higher than the first temperature of the alloy for up to 120 seconds. The invention further includes a monolithic three dimensional memory array of a plurality of p-i-n diodes, the p-i-n diodes being formed of a silicon-germanium alloy that have been subjected to a two-stage heating process. |
申请公布号 |
WO2008156754(A1) |
申请公布日期 |
2008.12.24 |
申请号 |
WO2008US07530 |
申请日期 |
2008.06.18 |
申请人 |
SANDISK 3D LLC;HERNER, S., BRAD |
发明人 |
HERNER, S., BRAD |
分类号 |
H01L29/861;H01L21/20;H01L21/329 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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