发明名称 SELECTIVE TRANSFER OF SEMICONDUCTOR DEVICE TO A SYSTEM SUBSTRATE
摘要 Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.
申请公布号 CA2880718(A1) 申请公布日期 2016.07.28
申请号 CA20152880718 申请日期 2015.01.28
申请人 IGNIS INNOVATION INC. 发明人 CHAJI, REZA;FATHI, EHSANALLAH
分类号 H01L21/58;H01L25/00 主分类号 H01L21/58
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