ELECTROLYTIC COPPER PLATING METHOD

摘要

The present invention provides an electrolytic copper plating method with excellent step coverage in a through silicon via. The electrolytic copper plating method includes a step of forming a copper (Cu) seed layer on a substrate having a via; a step of adsorbing a precious metal nanoparticle included in colloid by using an electrophoresis method on a substrate comprising the via having the Cu seed layer; a step of forming a Cu seed reinforcement layer by electroless copper plating on the adsorbed precious metal nanoparticle; and a step of forming a Cu plating layer on the substrate having the via having the Cu seed reinforcement layer.