| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can restrict a thickness and properly bond semiconductor substrates with each other.SOLUTION: A semiconductor device of the present embodiment comprises a first semiconductor substrate, a second semiconductor substrate, a first metal layer, a second metal layer, a third metal layer, a first alloy layer and a second alloy layer. The first semiconductor substrate and the second semiconductor substrate face each other. The first metal layer is provided on the first semiconductor substrate and faces the second semiconductor substrate. The second metal layer is provided on the second semiconductor substrate and faces the first metal layer. The third metal layer is arranged between the first metal layer and the second metal layer. The first alloy layer is arranged between the first metal layer and the third metal layer and contains a component of the first metal layer and a component of the third metal layer. The second alloy layer is arranged between the second metal layer and the third metal layer and contains a component of the second metal layer and the component of the third metal layer. At least one of the first and second metal layers protrudes on an outer edge of at least one of the first and second metal layers toward the third metal layer side.SELECTED DRAWING: Figure 1 |
