| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a shaping die that can form a fine uneven structure, having a wide range of pitch including an infrared region, on a surface including a large area surface and a curved surface.SOLUTION: In a method of manufacturing a shaping die for an optical element, a substrate made of a semiconductor or metal material reactive with sulfur hexafluoride is placed in a reactive ion etching apparatus, a mixed gas of sulfur hexafluoride and oxygen is introduced, and in a plasma dry etching process, oxides are scattered on a surface of the substrate and etching is made to progress on the surface of the substrate by the sulfur hexafluoride using the oxides as an etching prevention mask to form on the surface of the substrate a fine uneven structure having a pitch larger than 0.35 μm and having an upper limit of the pitch in an infrared region.SELECTED DRAWING: Figure 2 |
