| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology which can suppress variations of values after writing to the minimum, and facilitate multiple value coding in a semiconductor device such as a phase transition memory. <P>SOLUTION: The semiconductor device has; a memory cell including a storage element (phase transition element) which stores information by change of a status with temperature; an input and output circuit; and means, when writing data, to perform a set operation (step S101), then perform write operation of desired data (step S102), measure a resistance value of the storage element by a verify operation (step S103), and when the resistance value is not in the desired range, perform write operation for the second time by changing applying voltage to the storage element (steps S105 and S108) after performing the set operation again (steps S104 and S107). <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
