TRIPLED-GATE TRANSISTOR SEGMENT WITH ENGINEERED CORNERS

摘要

A system is provided for producing a triple-gate transistor segment (300), utilizing a standard semiconductor substrate (302). The substrate has a plurality of isolation regions (304) separated by a channel region (306). A removable form structure (308) is formed atop the isolation regions to define an area over the channel region within which a channel body structure (316) is formed. The form structure (308) is then removed. Channel body structure (316) has blunted corners or edges (3,18).