| 发明名称 |
Method for fabricating a semiconductor device |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL. |
| 申请公布号 |
US9530871(B1) |
申请公布日期 |
2016.12.27 |
| 申请号 |
US201615225836 |
申请日期 |
2016.08.02 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Tsai Ming-Yueh;Fang Jia-Feng;Chen Yi-Wei;Jhang Jing-Yin;Lee Rung-Yuan;Weng Chen-Yi;Wu Wei-Jen |
| 分类号 |
H01L21/8232;H01L29/66;H01L21/02;H01L21/324 |
主分类号 |
H01L21/8232 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL after forming the source/drain region. |
| 地址 |
Hsin-Chu TW |
