| 发明名称 | Semiconductor memory apparatus | ||
| 摘要 | A semiconductor memory apparatus may include a driving voltage-applying unit and a sub-word line-driving unit. The driving voltage-applying unit may be configured to generate a driving voltage in response to an active signal, a word line-enabling signal and a sub-word line selection signal. The sub-word line-driving unit may be configured to drive a sub-word line as a voltage level of the driving voltage in response to a main word line and the sub-word line selection signal. | ||
| 申请公布号 | US9530471(B1) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201514921012 | 申请日期 | 2015.10.23 |
| 申请人 | SK HYNIX INC. | 发明人 | Shin Sun Hye |
| 分类号 | G11C8/08;G11C7/22;G11C7/12;G11C8/10 | 主分类号 | G11C8/08 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor memory apparatus comprising: a driving voltage-applying unit configured to generate a driving voltage in response to an active signal, a word line-enabling signal and a sub-word line selection signal; and a sub-word line-driving unit configured to drive a sub-word line by a voltage level of the driving voltage in response to a main word line and the sub-word line selection signal. | ||
| 地址 | Icheon-Si KR | ||