| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film transistor manufacturing method which can reduce a length (L) of channel of a film transistor, increase an Ion current, reduce the width (W) channel of the film transistor corresponding to it, thereby, reduce the area of the film transistor part, and elevate an opening rate. <P>SOLUTION: The film transistor manufacturing method includes steps of A. providing a substrate, B. forming a patterned first metal layer, a patterned semiconductor layer, and second metal layer on the substrate, which patterned first metal layer contains a gate electrode, C. forming a patterned first photo resist layer on the second metal layer, a part of which first photo resist layer is positioned above the side of the first metal layer, D. forming a patterned second photo resist layer on the second metal layer, a part of which second photo resist layer is positioned above another side opposed to the side of the first metal layer, E. removing the second metal layer which is not covered with the first photo resist layer and second photo resist layer, and F. exposing the second metal layer patterned by removing the first photo resist layer and second photo resist layer and forming a source electrode and a drain electrode. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
