MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for flattening a surface of a work part in an insulating film formed on a semiconductor substrate. SOLUTION: Prescribed work is performed on the insulating film 24 formed on the semiconductor substrate. A first primary reactant to which a material containing Si content compound is made to react is supplied to the surface 28a of the work part in the insulating film 24. Dehydrate condensation is performed on the primary reactant. Thus, a silicone oxide film 30 is formed on the surface 28a of the work part. COPYRIGHT: (C)2009,JPO&INPIT